TPW2900ENH - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	TPW2900ENH
Manufacturer	Toshiba
File Size	372.76 KB
Description	Silicon N-Channel MOSFET
Datasheet	TPW2900ENH Datasheet
Additional preview pages of the TPW2900ENH datasheet.

(1) High-speed switching (2) Small gate charge: QSW = 8.2 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 24 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPW2900ENH DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2015-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-08 2019-10-30 Rev.3.0 TPW2900E.

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Published: Jan 31, 2024 |