Datasheet4U Logo Datasheet4U.com

TPW2R508NH Datasheet Silicon N-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon N-channel MOS (U-MOS-H) TPW2R508NH 1. Applications • High-Efficiency DC-DC Converters • Switching Voltage Regulators 2.

Key Features

  • (1) High-speed switching (2) Small gate charge: QSW = 28 nC (typ. ) (3) Low drain-source on-resistance: RDS(ON) = 2.0 mΩ (typ. ) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 75 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPW2R508NH DSOP Advance 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016-2019 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2015-12 2019-10-21 Rev.3.0 TPW2R508N.

More Datasheets from Toshiba

Part Number Description
TPW2900ENH Silicon N-Channel MOSFET
TPW1500CNH Silicon N-Channel MOSFET
TPW1R005PL Silicon N-channel MOSFET
TPW1R104PB N-channel MOSFET
TPW1R306PL Silicon N-channel MOSFET
TPW3R70APL Silicon N-Channel MOSFET
TPW4R008NH Silicon N-channel MOSFET
TPW4R50ANH Silicon N-channel MOSFET
TPW5200FNH Silicon N-Channel MOSFET
TPWR6003PL Silicon N-Channel MOSFET

TPW2R508NH Distributor