TTC009 - NPN Transistor

Toshiba

Datasheet Details

Part number	TTC009
Manufacturer	Toshiba
File Size	191.16 KB
Description	NPN Transistor
Datasheet	TTC009 Datasheet
Additional preview pages of the TTC009 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type TTC009 ○ Power Amplifier Applications ○ Power Switching Applications TTC009 Unit: mm • Low collector-emitter saturation voltage: VCE (sat) = 0.5 V (max)（IC = 1A） • High-speed switching: tstg = 0.4 μs (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Tc=25°C Ta=25°C VCBO VCEX VCEO VEBO IC ICP IB PC Tj Tstg 160 V 160 V 80 V 7 V 3 A 5 A 1 A 15 W 2 150 °C −55 to 150 °C JEDEC － JEITA SC-67 TOSHIBA 2-10R1A Weight:1.7g(typ.) Note1: Using continuously under heavy loads (e.g.

Published: Nov 11, 2013 |