The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Bipolar Transistors Silicon NPN Epitaxial Type
TTC1949
1. Applications
• Low-Frequency Power Amplifiers
2. Packaging and Internal Circuit
TTC1949
1. Base 2. Emitter 3. Collector
S-Mini
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
50
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
500
mA
Base current
IB
50
mA
Collector power dissipation
(Note 1)
PC
200
mW
Junction temperature
Tj
150
Storage temperature
Tstg
- 55 to 150
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
TTC1949 Datasheet
