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TTC3710B Datasheet NPN Transistor

Manufacturer: Toshiba

Overview: Bipolar Transistors Silicon NPN Epitaxial Type TTC3710B TTC3710B 1. Applications • High-Current Switching 2.

Key Features

  • (1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ. ) (3) Complementary to TTA1452B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collec.

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