TTC3710B Datasheet | Toshiba

Features (1) Low collector-emitter saturation voltage: VCE(sat) = 0.4 V (max) (IC = 6 A , IB = 0.3 A) (2) High speed switching: tstg = 1 µs (typ.) (3) plementary to TTA1452B 3. Packaging and Internal Circuit 1. Base 2. Collector 3. Emitter TO-220SIS 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (pulsed) Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 25 ) (Note 1) (Note 1) VCBO VCEO VEBO IC ICP IB PC PC Tj Tstg TOR 80 80 6 12 15 2 2 30 150 -55 to 150 0.6 W  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Ensure that the junction temperature does not exceed 150 . Start of mercial production 2012-09 2014-11-06 Rev.3.0 5. Electrical Characteristics 5.1. Static Characteristics (Ta = 25  unless otherwise specified) Characteristics Symbol Test Condition Min Collector cut-off current ICBO VCB = 80 V, IE = 0 A  Emitter cut-off current IEBO VEB = 6 V, IC = 0 A  Collector-emitter breakdown voltage V(BR)CEO IC = 50 m A, IB = 0...