1SS321 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching AEC-Q101 Qualified (Note1) Low forward voltage: VF(2) = 0.42 V (typ.) Low reverse current: IR = 500 nA (max) Small package:.
- Part: 1SS321
- Manufacturer: Toshiba (official site)
- Size: 268.13 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
SEMTECH |
1SS321 | SILICON EPITAXIAL SCHOTTKY BARRIER DIODE |
Kexin Semiconductor |
1SS321 | LOW VOLTAGE HIGH SPEED SWITCHING |