1SS321 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr 1SS321 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE For low voltage high speed switching application 3 Features • Low forward voltag

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TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS321 Low-Voltage High-Speed Switching  AEC-Q101 Qualified (Note1)  Low forward voltage: VF(2

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www.DataSheet.co.kr SMD Type LOW VOLTAGE HIGH SPEED SWITCHING 1SS321 Diodes SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 Low forward v

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