1SS372 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application 1SS372 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.
1SS372 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba .
| Manufacturer | Part Number | Description |
|---|---|---|
LGE |
1SS372 | Small Signal Schottky Barrier Diode |
JCET |
1SS372 | SCHOTTKY BARRIER DIODE |
Kexin Semiconductor |
1SS372 | HIGH SPEED SWITCHING DIODE |
Micro Commercial Components |
1SS372 | 100mA Schottky Barrier Diode |
| 1SS372 | SURFACE MOUNT SCHOTTKY BARRIER |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application 1SS372 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.