1SS377 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching 1SS377 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA.
1SS377 is Silicon Epitaxial Schottky Barrie Diode manufactured by Toshiba .
| Manufacturer | Part Number | Description |
|---|---|---|
Kexin Semiconductor |
1SS377 | HIGH SPEED SWITCHING DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS377 High Speed Switching 1SS377 Unit: mm z Low forward voltage z Small package : VF = 0.23V (typ.) @IF = 5mA.