1SS389 Description
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.
1SS389 is Silicon Diode manufactured by Toshiba .
| Manufacturer | Part Number | Description |
|---|---|---|
LGE |
1SS389 | Schottky Barrier Diode |
Micro Commercial Components |
1SS389 | Switching Diode |
Kexin Semiconductor |
1SS389 | HIGH SPEED SWITCHING DIODE |
JCST |
1SS389 | SCHOTTKY BARRIER DIODE |
SEMTECH |
1SS389 | SILICON EPITAXIAL S CHOTTKY BARRIER DIODE |
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS389 High Speed Switching Application 1SS389 Unit: mm z Small package z Low forward voltage: Using continuously under heavy loads (e.g.