1SV277 Description
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV277 1SV277 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.3 (typ.) Low series resistance: rs = 0.42 Ω (typ.) Small package Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note:.