2SB1016A Description
TOSHIBA Transistor Silicon PNP Epitaxial Type 2SB1016A Power Amplifier Applications 2SB1016A Unit: mm High breakdown voltage: VCEO = −100 V Low collector-emitter saturation voltage:.
- Part: 2SB1016A
- Manufacturer: Toshiba (official site)
- Size: 249.65 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Toshiba |
2SB1016 | SILICON PNP TRANSISTOR |
SavantIC |
2SB1016 | SILICON POWER TRANSISTOR |
Inchange Semiconductor |
2SB1016 | PNP Transistor |