2SC3419 Description
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3419 Medium-Power Amplifier Applications. mm Low saturation voltage: VCE (sat) = 0.25 V (typ.) (IC = 500 mA, IB = 50 mA) High collector power dissipation:.
- Part: 2SC3419
- Manufacturer: Toshiba (official site)
- Size: 132.51 KB
Equivalent or Similar Parts
| Manufacturer | Part Number | Description |
|---|---|---|
Inchange Semiconductor |
2SC3419 | NPN Transistor |