2SK2467 Description
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK2467 2SK2467 High-Power Amplifier Application High breakdown voltage: VDSS = 180 V High forward transfer admittance: |Yfs| = 4.0 S (typ.) Unit:.
- Part: 2SK2467
- Manufacturer: Toshiba (official site)
- Size: 101.89 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| 2SK2467-Y | N-Channel MOSFET |
| 2SK246 | N-Channel MOSFET |
| 2SK2466 | N-Channel MOSFET |
| 2SK2400 | Silicon N-Channel MOSFET |
| 2SK2401 | Silicon N-Channel MOSFET |