2SK3077 Description
2SK3077 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK3077 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) Unit: mm l Output Power l Gain l Drain Efficiency : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS ID PD Tch Tstg RATING 10 5 0.1 0.1 150 −45~150 UNIT V V...
2SK3077 Key Features
- Output Power
- Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15.0 dB (Min.) : ηD = 20% (Typ.) MAXIMUM RATINGS (Ta = 25°C)