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2SK3079
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3079
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC S Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range YMBOL VDSS 10 VGSS 5 ID PD* 20. Tch 150 Tstg −45~150 ° 5 0 RATING UNIT V V A W °C C
*:
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB JEDEC — JEITA TOSHIBA — 2−5N1A
MARKING
1
2001-11-20
http://www.Datasheet4U.com
2SK3079
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC S Output Power Drain Efficiency Power Gain Threshold Voltage Drain Cut-off Current Gate-Source Leakage Current YMBOL PO 33.
2SK3079 Datasheet
