Datasheet Summary
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain : l Drain Efficiency : PO = 33.0dBmW (Min) GP = 7.0dB (Min) : ηD = 40% (Min)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC S Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range YMBOL VDSS 10 VGSS 5 ID PD- 20. Tch 150 Tstg
- 45~150 ° 5 0 RATING UNIT V V A W °C C
- :
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB JEDEC
- JEITA TOSHIBA
- 2- 5N1A
MARKING
2001-11-20 http://..
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
CHARACTERISTIC S Output Power Drain...