2SK3070S Datasheet | Hitachi Semiconductor

Features - Low on-resistance R DS(on) = 4.5 mΩ typ. - Low drive current - 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 1. Gate 2. Drain 3. Source 4. Drain Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP EAR Pch Tch Tstg Note 3 Note 3 Note 2 Note 1 Ratings 40 ±20 75 300 75 50 333 100 150 - 55 to +150 Unit V V A A A A m J W °C °C 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50 Ω Datasheet Title Electrical Characteristics (Ta = 25°C) Item Symbol Min 40 - - 1.0 - - |yfs| Ciss Coss Crss Qg Qgs Qgd t d(on) tr t d(off) tf VDF t rr 50 - - - - - - - - - - - - Typ - - - - 4.5 6.5 80 6800 1300 380 130 25 30 60 300 550 400 1.05 90 Max - ±0.1 10 2.5 5.8 10 - - - - - - - - - - - -...