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2SK3070L Datasheet N-channel MOSFET

Manufacturer: Hitachi Semiconductor (now Renesas)

Overview: 2SK3070(L),2SK3070(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-684G (Z) 8th.

Key Features

  • Low on-resistance R DS(on) = 4.5 mΩ typ.
  • Low drive current.
  • 4 V gate drive device can be driven from 5 V source Outline LDPAK 4 4 D 1 1 2 3 G 2 3 1. Gate 2. Drain 3. Source 4. Drain S Datasheet Title Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note:.

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