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2SK3076S - N-Channel MOSFET

Key Features

  • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK3076(L),2SK3076(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 500 ±30 7 28 7 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channe.

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Other Datasheets by Hitachi Semiconductor (now Renesas)

Part Number Description
2SK3076 N-Channel MOSFET
2SK3076L N-Channel MOSFET
2SK3070 N-Channel MOSFET
2SK3070L N-Channel MOSFET
2SK3070S N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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2SK3076(L),2SK3076(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-656 (Z) 1st. Edition Jun 1998 Features • • • • Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 D 1 G 1 2 3 2 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK3076(L),2SK3076(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 500 ±30 7 28 7 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2.