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2SK3072 - N-Channel MOSFET

Key Features

  • Package Dimensions unit : mm 2091A [2SK3072] 0.5 0.4 0.16 0 to 0.1 Ultrahigh-speed switching. Low-voltage drive. 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.8 1.1 1 : Gate 2 : Source 3 : Dra.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENN7224 2SK3072 N-Channel Silicon MOSFET 2SK3072 Ultrahigh-Speed Switching Applications Features • • Package Dimensions unit : mm 2091A [2SK3072] 0.5 0.4 0.16 0 to 0.1 Ultrahigh-speed switching. Low-voltage drive. 3 1 0.95 0.95 2 1.9 2.9 0.5 1.5 2.5 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.8 1.