2SK3076 Datasheet | Hitachi Semiconductor

Features - - - - Low on-resistance High speed switching Low drive current. Built-in fast recovery diode (trr=120 ns) Outline LDPAK 4 4 1 G 1 2 3 1. Gate 2. Drain 3. Source 4. Drain 2SK3076(L),2SK3076(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Symbol VDSS VGSS ID I D(pulse) Note1 Ratings 500 ±30 7 28 7 Unit V V A A A W °C °C Body-drain diode reverse drain current I DR Channel dissipation Channel temperature Storage temperature Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25° C Pch Tch Tstg Note2 60 150 - 55 to +150 Electrical Characteristics (Ta = 25°C) Item Symbol Min 500 ±30 - - 2.0 - Typ - - - - - 0.7 Max - - ±10 250 3.0 0.9 Unit V V µA µA V Ω Test Conditions I D = 10m A, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±25V, VDS = 0 VDS = 400 V, VGS = 0 I D = 1m A, VDS = 10V I D = 4A, VGS = 10VNote4 I D = 4A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D =4A, VGS = 10V RL = 7.5 Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time |yfs| Ciss Coss Crss t d(on) tr t d(off) tf 3.5 - - - - - - - - - 6.0 1100 310 50 15 55 100 48 0.9 120 - - - - - - - - - - S p F p F p F ns ns ns ns V ns I F = 7A, VGS = 0 I F = 7A, VGS = 0 di F/ dt =100A/µs I GSS I DSS VGS(off) RDS(on) Body- drain diode forward voltage VDF Body- drain diode reverse recovery time Note: 4. Pulse test t...