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2SK3077
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Unit: mm l Output Power l Gain l Drain Efficiency : PO = 15.0 dBmW (Min.) : GP = 15.0 dB (Min.) : ηD = 20% (Typ.)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDSS VGSS ID PD* Tch Tstg RATING 10 5 0.1 0.1 150 −45~150 UNIT V V A W °C °C
*:
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB JEDEC JEITA TOSHIBA — — 2−2K1D
MARKING
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2001-12-26
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2SK3077 Datasheet
