2SK3079A Description
2SK3079A Preliminary TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK3079A 470 MHz Band Amplifier Applications Unit: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain Efficiency:.
2SK3079A Datasheet
| Part number | 2SK3079A |
|---|---|
| Download | 2SK3079A Datasheet (PDF) |
| File Size | 114.22 KB |
| Manufacturer | Toshiba |
| Description | N-Channel MOSFET |
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