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2SK3079A
Preliminary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3079A
470 MHz Band Amplifier Applications
Unit: mm Output power: Po = 33.50dBmW (2.2 W) (min) Gain: Gp = 13.50dB (min) Drain Efficiency: ηD = 50.0% (min)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Gate-source voltage Drain current Power dissipation Channel temperature Storage temperature range Symbol VDSS VGSS ID PD (Note 1) Tch Tstg Rating 10 3 3 20.0 150 −45~150 Unit V V A W °C °C
Note 1: Tc = 25°C JEDEC ― ― 2-5N1A
Marking
Type Name
JEITA TOSHIBA
UD
Dot
F **
Lot No.
2SK3079A Datasheet
