GT15Q102 Description
GT15Q102 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT15Q102 High Power Switching Applications Unit: mm The 3rd Generation Enhancement-Mode High Speed: tf = 0.32 µs (max) Low Saturation Voltage:.
- Part: GT15Q102
- Manufacturer: Toshiba (official site)
- Size: 152.24 KB
Related Toshiba Datasheets
| Part Number | Description |
|---|---|
| GT15Q101 | Silicon N-Channel IGBT |
| GT15Q301 | Silicon N-Channel IGBT |
| GT15Q311 | Silicon N-Channel IGBT |
| GT15G101 | Silicon N-Channel IGBT |
| GT15J101 | Silicon N-Channel IGBT |