TC554161AFTI Description
The TC554161AFTI is a 4,194,304-bit static random access memory (SRAM) organized as 262,144 words by 16bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 5V ± 10% power supply. Advanced circuit technology provides both high speed and low power at an operating current of 10 mA/MHz (typ) and a minimum cycle time of 70 ns.
TC554161AFTI Key Features
- Low-power dissipation Operating: 55 mW/MHz (typical) Single power supply voltage of 5 V ± 10% Power down features using
- Access Times (maximum)
- 85,-85L 85 ns 85 ns 45 ns
- 10,-10L 100 ns 100 ns 50 ns
- Package: TSOP II54-P-400-0.80 (AFTI) (Weight: 0.57 g typ)
- OP pin must be open of connected to GND