TK150E09NE Description
TK150E09NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOSⅧ-H) TK150E09NE E-Bike Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V) Low leakage current : IDSS = 10 μA (max) (VDS = 85 V) Enhancement mode.