TPCP8601 Description
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) TPCP8601 TPCP8601 High-Speed Switching Applications DC-DC Converter Applications Strobo Flash Applications 0.33±0.05 0.05 M A 8 5 Unit: mm 2.4±0.1 2.8±0.1 High DC current gain: hFE = 200 to 500 (IC = −0.6 A) Low collector-emitter saturation:.