TPCP8H02 Description
built-in NPN transistor for main switch and N-ch MOS FET for drive ・High DC current gain: hFE = 250 to 400 (IC = 0.3 A) (NPN transistor) ・Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max) (NPN transistor) ・High-speed switching:.