Datasheet Details
| Part number | TC1101 |
|---|---|
| Manufacturer | Transcom |
| File Size | 157.24 KB |
| Description | Low Noise and Medium Power GaAs FETs |
| Datasheet |
 TC1101 Datasheet
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General Description
The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.
Key Features
- Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO.