Datasheet4U Logo Datasheet4U.com

TC1101 Datasheet Low Noise And Medium Power Gaas Fets

Manufacturer: Transcom

Overview: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs.

Datasheet Details

Part number TC1101
Manufacturer Transcom
File Size 157.24 KB
Description Low Noise and Medium Power GaAs FETs
Datasheet TC1101_Transcom.pdf

General Description

The TC1101 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure, high associated gain and high dynamic range.

The device can be used in circuits up to 40 GHz and suitable for low noise and medium power amplifier applications including a wide range of commercial and military applications.

All devices are 100% DC tested to assure consistent quality.

Key Features

  • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 12 dB Typical at 12 GHz High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz Breakdown Voltage: BVDGO ≥ 9 V Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO.

More Datasheets from Transcom

Part Number Description
TC1102 Super Low Noise GaAs FETs
TC1301 Low Noise and Medium Power GaAs FETs
TC1601 2W High Linearity and High Efficiency GaAs Power FETs

TC1101 Distributor