TC1102 Datasheet | Transcom

TRANS January 2002 Super Low Noise GaAs FETs Features - - - - - Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of mercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either...