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TC1102 - Super Low Noise GaAs FETs

General Description

The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain.

The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications.

Key Features

  • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO.

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Datasheet Details

Part number TC1102
Manufacturer Transcom
File Size 112.69 KB
Description Super Low Noise GaAs FETs
Datasheet download datasheet TC1102 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TRANSCOM TC1102 January 2002 Super Low Noise GaAs FETs FEATURES • • • • • Low Noise Figure: NF = 0.5 dB Typical at 12 GHz High Associated Gain: Ga = 13 dB Typical at 12 GHz Lg = 0.25 µm, Wg = 160 µm All-Gold Metallization for High Reliability 100 % DC Tested PHOTO ENLARGEMENT DESCRIPTION The TC1102 is a GaAs Pseudomorphic High Electron Mobility Transistor (PHEMT) chip, which has very low noise figure and high associated gain. The device can be used in circuits up to 40 GHz and suitable for low noise application including a wide range of commercial and military applications. All devices are 100% DC tested to assure consistent quality. All bond pads are gold plated for either thermo-compression or thermo-sonic wire bonding.