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TC2201 - Plastic Packaged Low Noise PHEMT GaAs FETs

General Description

The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip.

Its low noise figure makes this device suitable for use in low noise amplifiers.

All devices are 100 % DC tested to assure consistent quality.

Key Features

  • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested.
  • Low Cost Plastic Micro-X Package.

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Datasheet Details

Part number TC2201
Manufacturer Transcom
File Size 216.21 KB
Description Plastic Packaged Low Noise PHEMT GaAs FETs
Datasheet download datasheet TC2201 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC2201 REV4_20070504 Plastic Packaged Low Noise PHEMT GaAs FETs PHOTO ENLARGEMENT FEATURES • • • • • • • • 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz Lg = 0.25 µm, Wg = 300 µm Tight Vp ranges control High RF input power handling capability 100 % DC Tested • Low Cost Plastic Micro-X Package DESCRIPTION The TC2201 is a high performance field effect transistor housed in a plastic package with TC1201 PHEMT Chip. Its low noise figure makes this device suitable for use in low noise amplifiers. All devices are 100 % DC tested to assure consistent quality.