Datasheet Summary
PRE1_20070518
Preliminary
7 W Packaged Single-Bias PHEMT GaAs Power FETs
Features
! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35% ! Breakdown Voltage: BVDGO ≥ 18V ! 100 % DC Tested ! Suitable for High Reliability Application
PHOTO ENLARGEMENT
DESCRIPTION
The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of mercial...