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TC3879 - 7W Packaged Single-Bias PHEMT GaAs Power FETs

General Description

The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply.

The flange ceramic package provides excellent thermal conductivity for the GaAs FET.

Key Features

  • ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35% ! Breakdown Voltage: BVDGO ≥ 18V ! 100 % DC Tested ! Suitable for High Reliability.

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Datasheet Details

Part number TC3879
Manufacturer Transcom
File Size 75.98 KB
Description 7W Packaged Single-Bias PHEMT GaAs Power FETs
Datasheet download datasheet TC3879 Datasheet

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Other Datasheets by Transcom

Part Number Description
TC3873 5.25 - 5.875 GHz 3W prematched FETs
TC3889 5W Packaged Self-Bias PHEMT GaAs Power FETs
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35% ! Breakdown Voltage: BVDGO ≥ 18V ! 100 % DC Tested ! Suitable for High Reliability Application PHOTO ENLARGEMENT DESCRIPTION The TC3879 is a self-bias flange ceramic packaged device with PHEMT GaAs FETs, which is designed to provide the single power supply. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The device is suitable for oscillators and power amplifiers in a wide range of commercial application. All devices are 100% DC tested to assure consistent quality. ELECTRICAL SPECIFICATIONS (@ 2.