Datasheet Summary
5.25
- 5.875 GHz 3W prematched FETs
Features
PRE2_20081024
PHOTO ENLARGEMENT z P dB: 34.5dBm z Small Signal Gain: 11 dB z Power Added Efficiency: 45 % z IP3: 43.5 dBm z Input/Output Prematched z Bias condition: 750 mA @ 8 V
-1
DESCRIPTION The TC3873 is a prematched GaAs PHEMT hybrid device. It is designed for use in low cost, high volume, and 5.25~5.875 GHz 3W amplifiers. It provides a typical gain of 11dB and P1dB of 34.5dBm. The device is packed in a copper based ceramic 10 pins SMT packages. The copper based carrier of the package allows direct soldering of the device to the PCB.. ELECTRICAL SPECIFICATIONS (TA=25 °C)
Symbol FREQ SSG P-1 dB IP3 VDD IDD Vg ,...