TC3889 Datasheet | Transcom

PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs Features - - - - - - - - 5W Typical Output Power 12dB Typical Linear Power Gain at 2.0GHz High Linearity: IP3 = 47 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 18V Wg = 12 mm 100 % DC Tested Suitable for High Reliability Application The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is...