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TC3889 - 5W Packaged Self-Bias PHEMT GaAs Power FETs

General Description

18 Note:

PSCL: Output Power of Single Carrier Level.

TRANSCOM, INC., 90 Dasoong 7th Road, Tainan Science-Based Industrial Park, Hsin-She Shiang, Tainan County Taiwan, R.O.C.

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Key Features

  • 5W Typical Output Power 12dB Typical Linear Power Gain at 2.0GHz High Linearity: IP3 = 47 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 18V Wg = 12 mm 100 % DC Tested Suitable for High Reliability.

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Datasheet Details

Part number TC3889
Manufacturer Transcom
File Size 181.73 KB
Description 5W Packaged Self-Bias PHEMT GaAs Power FETs
Datasheet download datasheet TC3889 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • • • • • • • • 5W Typical Output Power 12dB Typical Linear Power Gain at 2.0GHz High Linearity: IP3 = 47 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 18V Wg = 12 mm 100 % DC Tested Suitable for High Reliability Application The TC3889 is a self-bias flange ceramic packaged device with TC1806N PHEMT GaAs FETs, which is designed to provide the single power supply application. The flange ceramic package provides excellent thermal conductivity for the GaAs FET. The devices only need to provide the positive voltage to drain and ground the source, which is suitable for oscillator, power amplifier application in a wide range of commercial application.