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DAN222 - SWITCHING DIODE

Key Features

  • Power dissipation PD: 150 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃.

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Datasheet Details

Part number DAN222
Manufacturer Transys
File Size 52.47 KB
Description SWITCHING DIODE
Datasheet download datasheet DAN222 Datasheet

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DAN202U Plastic-Encapsulated Diode

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Transys Electronics LIMITED SOT-523 Plastic-Encapsulated Diode DAN222 SWITCHING DIODE FEATURES: Power dissipation PD: 150 mW (Tamb=25℃) Collector current IF: 100 mA Collector-base voltage VR: 80 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ CIRCUIT: SOT-523 1 3 2 MARKING: N ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse breakdown voltage Reverse voltage leakage current Symbol Test conditions MIN MAX V(BR) IR= 100µA 80 IR VR=70V 0.1 Forward voltage VF IF=100mA 1.2 Diode capacitance Reverse recovery time CD VR=6V, f=1MHz trr VR=6V, IF=5mA 3.