Part T2G4003532-FL
Description GaN RF Power Transistor
Category Transistor
Manufacturer TriQuint Semiconductor
Size 0.96 MB
TriQuint Semiconductor
T2G4003532-FL

Overview

The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.

  • Frequency: DC to 3.5 GHz
  • Output Power (P3dB): 28 W at 3.5 GHz
  • Linear Gain: >16 dB at 3.5 GHz
  • Operating Voltage: 32 V
  • Low thermal resistance package Functional Block Diagram