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T2G4003532-FL - GaN RF Power Transistor

Description

The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz.

Features

  • Frequency: DC to 3.5 GHz.
  • Output Power (P3dB): 28 W at 3.5 GHz.
  • Linear Gain: >16 dB at 3.5 GHz.
  • Operating Voltage: 32 V.
  • Low thermal resistance package Functional Block Diagram General.

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Datasheet Details

Part number T2G4003532-FL
Manufacturer TriQuint Semiconductor
File Size 0.96 MB
Description GaN RF Power Transistor
Datasheet download datasheet T2G4003532-FL Datasheet
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Full PDF Text Transcription

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T2G4003532-FL 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 3.5 GHz • Output Power (P3dB): 28 W at 3.5 GHz • Linear Gain: >16 dB at 3.5 GHz • Operating Voltage: 32 V • Low thermal resistance package Functional Block Diagram General Description The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
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