T2G4003532-FL
T2G4003532-FL is GaN RF Power Transistor manufactured by TriQuint Semiconductor.
30W, 32V DC
- 3.5 GHz, GaN RF Power Transistor
Applications
- Military radar
- Civilian radar
- Professional and military radio munications
- Test instrumentation
- Wideband or narrowband amplifiers
- Jammers
Product Features
- Frequency: DC to 3.5 GHz
- Output Power (P3dB): 28 W at 3.5 GHz
- Linear Gain: >16 dB at 3.5 GHz
- Operating Voltage: 32 V
- Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which Features advanced field plate techniques to optimize power and efficiency...
