• Part: T2G4003532-FL
  • Manufacturer: TriQuint Semiconductor
  • Size: 0.96 MB
Download T2G4003532-FL Datasheet PDF
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T2G4003532-FL Description

The TriQuint T2G4003532-FL is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which.

T2G4003532-FL Key Features

  • Frequency: DC to 3.5 GHz
  • Output Power (P3dB): 28 W at 3.5 GHz
  • Linear Gain: >16 dB at 3.5 GHz
  • Operating Voltage: 32 V
  • Low thermal resistance package