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T2G4003532-FS

Manufacturer: TriQuint Semiconductor

T2G4003532-FS datasheet by TriQuint Semiconductor.

T2G4003532-FS datasheet preview

T2G4003532-FS Datasheet Details

Part number T2G4003532-FS
Datasheet T2G4003532-FS-TriQuintSemiconductor.pdf
File Size 0.96 MB
Manufacturer TriQuint Semiconductor
Description GaN RF Power Transistor
T2G4003532-FS page 2 T2G4003532-FS page 3

T2G4003532-FS Overview

The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which.

T2G4003532-FS Key Features

  • Frequency: DC to 3.5 GHz
  • Output Power (P3dB): 28 W at 3.5 GHz
  • Linear Gain: >16 dB at 3.5 GHz
  • Operating Voltage: 32 V
  • Low thermal resistance package
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T2G4003532-FS Distributor

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