Datasheet4U Logo Datasheet4U.com

T2G4003532-FS - GaN RF Power Transistor

Description

The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz.

Features

  • Frequency: DC to 3.5 GHz.
  • Output Power (P3dB): 28 W at 3.5 GHz.
  • Linear Gain: >16 dB at 3.5 GHz.
  • Operating Voltage: 32 V.
  • Low thermal resistance package Functional Block Diagram General.

📥 Download Datasheet

Datasheet preview – T2G4003532-FS

Datasheet Details

Part number T2G4003532-FS
Manufacturer TriQuint Semiconductor
File Size 0.96 MB
Description GaN RF Power Transistor
Datasheet download datasheet T2G4003532-FS Datasheet
Additional preview pages of the T2G4003532-FS datasheet.

📁 Similar Datasheet

Other Datasheets by TriQuint Semiconductor

Full PDF Text Transcription

Click to expand full text
T2G4003532-FS 30W, 32V DC – 3.5 GHz, GaN RF Power Transistor Applications • Military radar • Civilian radar • Professional and military radio communications • Test instrumentation • Wideband or narrowband amplifiers • Jammers Product Features • Frequency: DC to 3.5 GHz • Output Power (P3dB): 28 W at 3.5 GHz • Linear Gain: >16 dB at 3.5 GHz • Operating Voltage: 32 V • Low thermal resistance package Functional Block Diagram General Description The TriQuint T2G4003532-FS is a 30 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 3.5 GHz. The device is constructed with TriQuint’s proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions.
Published: |