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TGA2540-FL - GaN Power Amplifier

Description

35 30 band.

33 10 production process.

Features

  • Frequency Range: 30 to 3000 MHz.
  • Psat: 39.5 dBm, P1dB: 35 dBm.
  • PAE: >40%.
  • Small Signal Gain: 19.5 dB.
  • TOI: 43 dBm.
  • NF: 4 dB.
  • Bias: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V Typical.
  • Package Dimensions: 25.15 x 14.48 x 4.85 mm Measured Performance Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical 42 100 41 90 40 80 Primary.

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Datasheet preview – TGA2540-FL

Datasheet Details

Part number TGA2540-FL
Manufacturer TriQuint Semiconductor
File Size 255.44 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2540-FL Datasheet
Additional preview pages of the TGA2540-FL datasheet.

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Full PDF Text Transcription

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TGA2540-FL 30 to 3000 MHz GaN Power Amplifier Psat (dBm) Key Features • Frequency Range: 30 to 3000 MHz • Psat: 39.5 dBm, P1dB: 35 dBm • PAE: >40% • Small Signal Gain: 19.5 dB • TOI: 43 dBm • NF: 4 dB • Bias: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V Typical • Package Dimensions: 25.15 x 14.48 x 4.85 mm Measured Performance Bias conditions: Vd = 30 V, Idq = 360 mA, Vg = -3.32 V, Typical 42 100 41 90 40 80 Primary Application • Military Communication Product Description 39 70 PAE (%) 38 60 The TGA2540-FL Power Amplifier provides 37 50 19.5 dB of small signal gain and greater than 36 40 8 W of output power across 30 to 3000 MHz 35 30 band. The TGA2540-FL is designed using 34 PAE Psat 20 TriQuint’s standard 0.25-µm GaN HEMT 33 10 production process. 32 0 0 0.3 0.6 0.9 1.2 1.5 1.
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