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TGA2576-2-FL - GaN Power Amplifier

General Description

TriQuint’s TGA2576-2-FL is a wideband power amplifier fabricated on TriQuint’s proven 0.25um GaN on SiC production technology.

Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain.

Key Features

  • Frequency Range: 2.5 to 6 GHz.
  • PSAT: 46.5 dBm @ PIN = 26dBm, CW.
  • PAE: 36%.
  • Small Signal Gain: 29 dB.
  • Bias: VD = 30 V, IDQ = 1.55 A, VG =.
  • 2.5 V Typical.
  • Dimensions: 11.4 x 17.3 x 3.0 mm. Functional Block Diagram General.

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Datasheet Details

Part number TGA2576-2-FL
Manufacturer TriQuint Semiconductor
File Size 599.20 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2576-2-FL Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Communications  Electronic Warfare  Test Instrumentation  EMC Amplifier TGA2576-2-FL 2.5 to 6GHz 40W GaN Power Amplifier Product Features  Frequency Range: 2.5 to 6 GHz  PSAT: 46.5 dBm @ PIN = 26dBm, CW  PAE: 36%  Small Signal Gain: 29 dB  Bias: VD = 30 V, IDQ = 1.55 A, VG = −2.5 V Typical  Dimensions: 11.4 x 17.3 x 3.0 mm. Functional Block Diagram General Description TriQuint’s TGA2576-2-FL is a wideband power amplifier fabricated on TriQuint’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain.