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TGA2576-FL Datasheet 2.5 To 6 Ghz Gan Hemt Power Amplifier

Manufacturer: TriQuint Semiconductor

Overview: TGA2576-FL 2.5 to 6 GHz GaN HEMT Power Amplifier Applications • • • • Communications Electronic Warfare Test Instrumentation EMC Amplifier.

Datasheet Details

Part number TGA2576-FL
Manufacturer TriQuint Semiconductor
File Size 381.18 KB
Description 2.5 to 6 GHz GaN HEMT Power Amplifier
Datasheet TGA2576-FL_TriQuintSemiconductor.pdf

General Description

TriQuint’s TGA2576-FL is a packaged wideband power amplifier fabricated on TriQuint’s production-released 0.25um GaN on SiC process.

Operating from 2.5 GHz to 6 GHz, it achieves 45.5 dBm saturated output power, 35% PAE and 26 dB small signal gain.

Fully matched to 50 ohms and with integrated DC blocking caps on both I/O ports, the TGA2576-FL is ideally suited to support both commercial and defense related opportunities.

Key Features

  • Frequency Range: 2.5.
  • 6 GHz Psat: 45.5 dBm @ Pin = 26 dBm PAE: 35 % Small Signal Gain: 26 dB Bias: Vd = 30 V, Idq = 1.55 A, Vg = -3.3 V Typical Dimensions: 11.4 x 17.3 x 3.0 mm Functional Block Diagram 1 2 10 9 3 8 4 5 www. DataSheet. net/ 7 6 General.

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TGA2576-FL Distributor