TGA2578-CP Datasheet | TriQuint Semiconductor

Features - Frequency Range: 2 - 6 GHz - Pout: 45 d Bm at PIN = 23 d Bm - PAE: >30% CW - Small Signal Gain: >26 d B - IM3: -30 d Bc @ 30 d Bm Pout/Tone - Bias: VD = 28 V, IDQ = 400 m A, VG = -2.8 V Typical - Package Dimensions: 15.2 x 15.2 x 3.5 mm - Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 9 8 7 6 General Description Tri Quint’s TGA2578-CP is a packaged wideband power amplifier fabricated on Tri Quint’s TQGa N25 0.25um Ga N on Si C process. Operating from 2 to 6 GHz, the TGA2578-CP achieves 30 W saturated output power with a power-added efficiency of > 30 %, and > 26 d B small signal gain. The TGA2578-CP is offered in a 10-lead 15 x 15 mm bolt-down package. The package has a pure Cu base, offering superior thermal management. The TGA2578CP is ideally suited to support both mercial and defense applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Lead free and Ro HS pliant. Evaluation Boards are available upon request. Pin Configuration Pad No. 1, 5 2, 4, 7, 9 3 6, 10 8 Symbol VG GND RFIN VD RFOUT Ordering Information Part ECCN Description 3A001.b.2.a - 6 GHz, 30 W Ga N Power Amplifier Preliminary Datasheet: 02-03-15 © 2014 Tri Quint - 1 of 12 - Disclaimer: Subject to change without notice .triquint. 2 to 6 GHz, 30W Ga N Power Amplifier Absolute Maximum Ratings Remended Operating Conditions Parameter Drain Voltage (VD) Gate Voltage Range (VG) Drain Current...