TGA2576-2-FL - 40W GaN Power Amplifier

Qorvo

General Description

2.5

Data Sheet Rev.

8 to 0 V Drain Current (ID) 5000 mA

Key Features

Frequency Range: 2.5 to 6 GHz.
PSAT: 46.5 dBm (PIN = 26 dBm).
PAE: 36% (PIN = 26 dBm).
Small Signal Gain: 29 dB.
Bias: Pulse VD = 30 V, IDQ = 1.55 A.
Dimensions: 11.4 x 17.3 x 3.0 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram.

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TGA2576-2-FL 40w gan power amplifier by Qorvo - Datasheet Preview

Datasheet Details

Part number	TGA2576-2-FL
Manufacturer	Qorvo
File Size	570.77 KB
Description	40W GaN Power Amplifier
Datasheet	TGA2576-2-FL Datasheet

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TGA2576-2-FL ® 2.5 – 6.0 GHz 40 W GaN Power Amplifier Product Overview Qorvo’s TGA2576-2-FL is a wideband power amplifier fabricated on Qorvo’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain. For ideal thermal management and handling, the TGA2576-2-FL is offered in a CuW-based flanged packaged and can operate in both CW and pulsed modes. Both RF ports are fully matched to 50Ω, the TGA2576-2-FL is ideally suited to support a variety of commercial and defense related applications. Lead-free and RoHS compliant. Key Features • Frequency Range: 2.5 to 6 GHz • PSAT: 46.