Datasheet Details
| Part number | TGA2576-2-FL |
|---|---|
| Manufacturer | Qorvo |
| File Size | 570.77 KB |
| Description | 40W GaN Power Amplifier |
| Datasheet | TGA2576-2-FL-Qorvo.pdf |
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Overview: TGA2576-2-FL ® 2.5 – 6.0 GHz 40 W GaN Power Amplifier Product Overview Qorvo’s TGA2576-2-FL is a wideband power amplifier fabricated on Qorvo’s proven 0.25um GaN on SiC production technology. Operating from 2.5 to 6 GHz, the TGA2576-2-FL achieves 40W of saturated output power, greater than 36% power-added efficiency and 29dB small signal gain. For ideal thermal management and handling, the TGA2576-2-FL is offered in a CuW-based flanged packaged and can operate in both CW and pulsed modes. Both RF ports are fully matched to 50Ω, the TGA2576-2-FL is ideally suited to support a variety of commercial and defense related applications. Lead-free and RoHS compliant.
| Part number | TGA2576-2-FL |
|---|---|
| Manufacturer | Qorvo |
| File Size | 570.77 KB |
| Description | 40W GaN Power Amplifier |
| Datasheet | TGA2576-2-FL-Qorvo.pdf |
|
|
|
2.5–6.0 GHz 40 Watt GaN Power Amplifier Evaluation Board Data Sheet Rev.
C, November 2023 | Subject to change without notice 1 of 11 www.qorvo.com ® Absolute Maximum Ratings Parameter Rating Drain Voltage (VD) 40 V Gate Voltage (VG) −8 to 0 V Drain Current (ID) 5000 mA Gate Current (IG) See plot, page 6 Power Dissipation (PDISS) 93 W RF Input Power, CW, Output Load 50 Ω, VD = 30 V, IDQ = 1.55 A, T = 85 °C 32 dBm RF Input Power, CW, Output Load VSWR = 3:1, VD = 30 V, IDQ = 1.55 A, T = 85 °C 27 dBm Soldering Temperature (leads) 260 °C Storage Temperature −40 to +150 °C Exceeding any one or a combination of the Absolute Maximum Rating conditions may cause permanent damage to the device.
Extended application of Absolute Maximum Rating conditions to the device may reduce device
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
TGA2576-2-FL | GaN Power Amplifier | TriQuint Semiconductor |
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