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TGA2585 - GaN Power Amplifier

General Description

TriQuint’s TGA2585 is an S-band MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25).

Covering 2.7-3.7GHz, the TGA2585 provides 18W of saturated output power and 33dB of small signal gain while achieving 52% poweradded efficiency.

Key Features

  • Frequency Range: 2.7.
  • 3.7GHz.
  • PSAT: 42.8dBm at 28V.
  • PAE: 52%.
  • Small Signal Gain: 33dB.
  • Input Return Loss: >15dB.
  • Output Return Loss: >12dB.
  • Bias: VD = 25-32V (CW or Pulsed), IDQ = 225mA, VG = -2.5V Typical.
  • Pulsed VD: PP = 1ms, DC = 10%.
  • Chip Dimensions: 3.0 x 1.9 x 0.10 mm Functional Block Diagram 2 34 56 1 J1 RF In 7 J2 RF Out General.

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Datasheet Details

Part number TGA2585
Manufacturer TriQuint Semiconductor
File Size 588.17 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2585 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Commercial and military radar TGA2585 2.7 – 3.7GHz 18W GaN Power Amplifier Product Features  Frequency Range: 2.7 – 3.7GHz  PSAT: 42.8dBm at 28V  PAE: 52%  Small Signal Gain: 33dB  Input Return Loss: >15dB  Output Return Loss: >12dB  Bias: VD = 25-32V (CW or Pulsed), IDQ = 225mA, VG = -2.5V Typical  Pulsed VD: PP = 1ms, DC = 10%  Chip Dimensions: 3.0 x 1.9 x 0.10 mm Functional Block Diagram 2 34 56 1 J1 RF In 7 J2 RF Out General Description TriQuint’s TGA2585 is an S-band MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process (TQGaN25). Covering 2.7-3.7GHz, the TGA2585 provides 18W of saturated output power and 33dB of small signal gain while achieving 52% poweradded efficiency.