Datasheet4U Logo Datasheet4U.com

TGA2590 - 30W GaN Power Amplifier

General Description

TriQuint’s TGA2590 is a wideband power amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

The TGA2590 operates from 6 - 12GHz and provides greater than 30W of saturated output power with greater than 22 dB of large signal gain and greater than 25% power-added efficiency.

Key Features

  • Frequency Range: 6 - 12 GHz.
  • Output Power: > 45 dBm (PIN = 23 dBm).
  • PAE: > 25 % (PIN = 23 dBm).
  • Large Signal Gain: > 22.0 dB.
  • VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.
  • Chip Dimensions: 5.4 mm x 7.0 mm x 0.10 mm Functional Block Diagram General.

📥 Download Datasheet

Datasheet Details

Part number TGA2590
Manufacturer TriQuint Semiconductor
File Size 548.38 KB
Description 30W GaN Power Amplifier
Datasheet download datasheet TGA2590 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Applications  Electronic Warfare  Commercial and Military Radar TGA2590 6-12 GHz 30W GaN Power Amplifier Product Features  Frequency Range: 6 - 12 GHz  Output Power: > 45 dBm (PIN = 23 dBm)  PAE: > 25 % (PIN = 23 dBm)  Large Signal Gain: > 22.0 dB  VD = 20 V, IDQ = 2.0 A, VG = -2.4 V typ.  Chip Dimensions: 5.4 mm x 7.0 mm x 0.10 mm Functional Block Diagram General Description TriQuint’s TGA2590 is a wideband power amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2590 operates from 6 - 12GHz and provides greater than 30W of saturated output power with greater than 22 dB of large signal gain and greater than 25% power-added efficiency. The TGA2590 is fully matched to 50Ω with DC blocking caps at both RF ports allowing for simple system integration.