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TGA2594-HM - GaN Power Amplifier

General Description

Qorvo’s TGA2594-HM is a packaged power amplifier fabricated on Qorvo’s 0.15 um GaN on SiC process (QGaN15).

Operating from 27 to 31 GHz, the TGA2594HM achieves 36.5 dBm saturated output power with a power-added efficiency of 25 %, and 25 dB small signal gain.

Key Features

  • Frequency Range: 27 .
  •  31 GHz.
  • POUT: 36.5 dBm at PIN = 14 dBm.
  • PAE: 25 % CW.
  • Smal.

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Datasheet Details

Part number TGA2594-HM
Manufacturer TriQuint Semiconductor
File Size 1.08 MB
Description GaN Power Amplifier
Datasheet download datasheet TGA2594-HM Datasheet

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TGA2594-HM 27 – 31 GHz GaN Power Amplifier Product Description Qorvo’s TGA2594-HM is a packaged power amplifier fabricated on Qorvo’s 0.15 um GaN on SiC process (QGaN15). Operating from 27 to 31 GHz, the TGA2594HM achieves 36.5 dBm saturated output power with a power-added efficiency of 25 %, and 25 dB small signal gain. The TGA2594-HM is offered in a hermetically sealed 22lead 7 x7 mm ceramic QFN designed for surface mount to a printed circuit board. The package has a Cu base, offering superior thermal management. The TGA2594-HM is ideally suited to support both commercial and military applications. Both RF ports have integrated DC blocking capacitors and are fully matched to 50 Ohms. Lead free and RoHS compliant. Evaluation Boards are available upon request.