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TGA2597 - GaN Driver Amplifier

General Description

TriQuint's TGA2597 is a driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process.

The TGA2597 operates from 2.0 to 6.0 GHz and provides > 31.5 dBm of output power with > 13.5 dB of large signal gain and > 31 % power-added efficiency.

Key Features

  • Frequency Range: 2-6 GHz.
  • Output Power: > 31.5 dBm (PIN = 18 dBm).
  • PAE: > 31 % (PIN = 18 dBm).
  • Large Signal Gain: > 13.5 dB (PIN = 18 dBm).
  • Small Signal Gain: > 24 dB.
  • VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ.
  • Chip Dimensions: 2.140 mm x 1.500 mm x 0.10 mm Functional Block Diagram 23 J1 1 RF In 4 J2 RF Out 65 General.

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Datasheet Details

Part number TGA2597
Manufacturer TriQuint Semiconductor
File Size 894.84 KB
Description GaN Driver Amplifier
Datasheet download datasheet TGA2597 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications • Commercial and Military Radar • Communications • Electronic Warfare (EW) TGA2597 2-6 GHz GaN Driver Amplifier Product Features • Frequency Range: 2-6 GHz • Output Power: > 31.5 dBm (PIN = 18 dBm) • PAE: > 31 % (PIN = 18 dBm) • Large Signal Gain: > 13.5 dB (PIN = 18 dBm) • Small Signal Gain: > 24 dB • VD = 25 V, IDQ = 40 mA, VG = -2.5 V typ. • Chip Dimensions: 2.140 mm x 1.500 mm x 0.10 mm Functional Block Diagram 23 J1 1 RF In 4 J2 RF Out 65 General Description TriQuint's TGA2597 is a driver amplifier fabricated on TriQuint's TQGaN25 0.25um GaN on SiC production process. The TGA2597 operates from 2.0 to 6.0 GHz and provides > 31.5 dBm of output power with > 13.5 dB of large signal gain and > 31 % power-added efficiency.