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TGA2611-SM - GaN LNA

General Description

TriQuint’s TGA2611-SM is a packaged broadband Low Noise Amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.

The TGA2611-SM operates from 2 to 6 GHz and typically provides >18 dBm P1dB, >22 dB of small signal gain and 30 dBm of OTOI with 1.0 dB NF.

Key Features

  • Frequency Range: 2.
  • 6 GHz.
  • NF: 1.0 dB.
  • OTOI: 30 dBm at Pout/tone = 18 dBm.
  • Small Signal Gain: 22 dB.
  • Return Loss: >10 dB.
  • P1dB: 18 dBm, PSAT = 26 dBm at PIN = 10 dBm.
  • Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V.
  • Package Dimensions: 4.0 x 4.0 x 0.85 mm Functional Block Diagram General.

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Datasheet Details

Part number TGA2611-SM
Manufacturer TriQuint Semiconductor
File Size 548.96 KB
Description GaN LNA
Datasheet download datasheet TGA2611-SM Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Applications  Commercial and Military Radar  Communications TGA2611-SM 2-6 GHz GaN LNA Product Features  Frequency Range: 2 – 6 GHz  NF: 1.0 dB  OTOI: 30 dBm at Pout/tone = 18 dBm  Small Signal Gain: 22 dB  Return Loss: >10 dB  P1dB: 18 dBm, PSAT = 26 dBm at PIN = 10 dBm  Bias: VD = 10 V, IDQ = 100 mA, VG = -2.3 V  Package Dimensions: 4.0 x 4.0 x 0.85 mm Functional Block Diagram General Description TriQuint’s TGA2611-SM is a packaged broadband Low Noise Amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. The TGA2611-SM operates from 2 to 6 GHz and typically provides >18 dBm P1dB, >22 dB of small signal gain and 30 dBm of OTOI with 1.0 dB NF.