TGA2625-CP Datasheet | TriQuint Semiconductor

Applications - Radar - munications 10 to 11 GHz, 17 W GaN Power Amplifier Product Features - Frequency Range: 10 - 11 GHz - Pout: 42.5 dBm (at PIN = 15 dBm) - PAE: > 40 % - Power Gain: 28 dB (at PIN = 15 dBm) - Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 µs, DC = 10 %) - Package Dimensions: 15.2 x 15.2 x 3.5 mm - Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 9 8 7 6 General Description TriQuint’s TGA2625-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2625-CP achieves 42.5 dBm saturated output power, a...