Datasheet Details
| Part number | TGA2625-CP |
|---|---|
| Manufacturer | TriQuint Semiconductor |
| File Size | 522.23 KB |
| Description | GaN Power Amplifier |
| Datasheet |
 TGA2625-CP Datasheet
|
|
|
General Description
TriQuint’s TGA2625-CP is a packaged high-power X-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.
Operating from 10 to 11 GHz, the TGA2625-CP achieves 42.5 dBm saturated output power, a power-added efficiency of > 40 %, and power gain of 28 dB.
Key Features
- Frequency Range: 10.
- 11 GHz.
- Pout: 42.5 dBm (at PIN = 15 dBm).
- PAE: > 40 %.
- Power Gain: 28 dB (at PIN = 15 dBm).
- Bias: VD = 28 V, IDQ = 365 mA, VG = -2.6 V typical, pulsed (PW = 100 µs, DC = 10 %).
- Package Dimensions: 15.2 x 15.2 x 3.5 mm.
- Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General.