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TGA2625 - GaN Power Amplifier

General Description

TriQuint’s TGA2625 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process.

11GHz and provides a superior combination of power, gain and efficiency.

Key Features

  • Frequency Range: 10.
  • 11GHz.
  • PSAT: 43dBm @ PIN = 15dBm.
  • P1dB: >40dBm.
  • PAE: >42% @ PIN = 15dBm.
  • Large Signal Gain: 28dB.
  • Small Signal Gain: 37dB.
  • Return Loss: >11dB.
  • Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical.
  • Pulsed VD: PW = 100us and DC = 10%.
  • Chip Dimensions: 5.0 x 2.62 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General.

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Datasheet Details

Part number TGA2625
Manufacturer TriQuint Semiconductor
File Size 554.87 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2625 Datasheet

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Applications  Radar  Communications TGA2625 10 – 11GHz 20W GaN Power Amplifier Product Features  Frequency Range: 10 – 11GHz  PSAT: 43dBm @ PIN = 15dBm  P1dB: >40dBm  PAE: >42% @ PIN = 15dBm  Large Signal Gain: 28dB  Small Signal Gain: 37dB  Return Loss: >11dB  Bias: VD = 28V, IDQ = 365mA, VG = -2.5V Typical  Pulsed VD: PW = 100us and DC = 10%  Chip Dimensions: 5.0 x 2.62 x 0.10 mm Functional Block Diagram 2 3 45 16 10 9 8 7 General Description TriQuint’s TGA2625 is an x-band, high power MMIC amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The TGA2625 operates from 10– 11GHz and provides a superior combination of power, gain and efficiency.