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TGA2814-CP - GaN Power Amplifier

Datasheet Summary

Description

TriQuint’s TGA2814-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.

Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB.

Features

  • Frequency Range: 3.1.
  • 3.6 GHz.
  • Pout: 49 dBm at PIN = 27 dBm.
  • PAE: 50 % Pulsed.
  • Power Gain: 23 dB at PIN = 27 dBm.
  • Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical, pulsed (PW = 15 ms, DC = 30 %).
  • Package Dimensions: 15.2 x 15.2 x 3.5 mm.
  • Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General.

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Datasheet preview – TGA2814-CP

Datasheet Details

Part number TGA2814-CP
Manufacturer TriQuint Semiconductor
File Size 444.89 KB
Description GaN Power Amplifier
Datasheet download datasheet TGA2814-CP Datasheet
Additional preview pages of the TGA2814-CP datasheet.

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Full PDF Text Transcription

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Applications  Radar TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier Product Features  Frequency Range: 3.1 – 3.6 GHz  Pout: 49 dBm at PIN = 27 dBm  PAE: 50 % Pulsed  Power Gain: 23 dB at PIN = 27 dBm  Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical, pulsed (PW = 15 ms, DC = 30 %)  Package Dimensions: 15.2 x 15.2 x 3.5 mm  Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General Description TriQuint’s TGA2814-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process. Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB.
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