TGA2814-CP - GaN Power Amplifier

TriQuint Semiconductor

Datasheet Details

TriQuint’s TGA2814-CP is a packaged high-power S-Band amplifier fabricated on TriQuint’s TQGaN25 0.25 um GaN on SiC process.

Operating from 3.1 to 3.6 GHz, the TGA2814-CP achieves 80 W saturated output power, a power-added efficiency of 50 %, and power gain of 23 dB.

The TGA2814-CP is packaged in a 10-lead 15x15 mm bolt-down package with a Cu base for superior thermal management.

Applications  Radar TGA2814-CP 3.1 to 3.6 GHz, 80W GaN Power Amplifier.

Frequency Range: 3.1.
3.6 GHz.
Pout: 49 dBm at PIN = 27 dBm.
PAE: 50 % Pulsed.
Power Gain: 23 dB at PIN = 27 dBm.
Bias: VD = 30 V, IDQ = 200 mA, VG = -3 V typical, pulsed (PW = 15 ms, DC = 30 %).
Package Dimensions: 15.2 x 15.2 x 3.5 mm.
Package base is pure Cu offering superior thermal management Functional Block Diagram 1 2 3 4 5 10 9 8 7 6 General.